p age:p 2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures high breakdown voltage low collector - emitter saturation voltage complementary type: pzta92(pnp) maximum ratings (ta=25 unless otherwise noted) par a met e r symbol value uni t col l ector - ba s e v o l t age v cbo 3 00 v col l ector - emitter v o l t age v ceo 300 v emitter - base v o l t a g e v ebo 6 v col l ector cur re n t - conti n u o us i c 500 m a col l ector p o w e r dissi p a t i on i c 1 w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 unless otherwise specified) p a r a m e t e r s y mbol t es t con diti o ns m in t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c = 100 a,i e =0 300 v collector - emitter bre a kd o w n v ol t age v ceo i c = 1 ma,i b =0 300 v emitter - b a s e breakd o w n v o l t age v ebo i e = 100 a,i c =0 6 v collector cut - off current i cbo v cb =200 v ,i e =0 0.1 a emitter cut - off current i ebo v eb = 6 v ,i c =0 0.1 a dc cur r ent g a in h fe(1) v ce =10 v ,i c = 1 ma 25 h fe(2) v ce =10 v ,i c = 1 0 ma 40 h fe(3) v ce =10 v ,i c = 3 0 ma 40 collector - emitter satu r ation v o l t age v ce(sat) i c =20ma,i b = 2 ma 0.5 v ba s e - emitt e r saturation v ol t age v be(sat) i c =20ma,i b = 2 ma 0.9 v t r a n s ition fr e qu e n c y f t v ce =20 v ,i c = 1 0 ma,f = 100mhz 50 mhz collector output ca p aci t a nce c ob v cb =20 v ,i e = 0 , f = 1 mhz 3 p f PZTA42 ( npn ) 1. base 3. emitter sot - 223 2. collecto
p age:p 2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. PZTA42 typical characteristics
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